101. J. D. Joannopoulos and M. L. Cohen, "Disorder and the electronic density of states of amorphous binary compounds," in Tetrahedrally Bonded Amorphous Semiconductors, eds. M. H. Brodsky, S. Kirkpatrick, and D. Weaire (AIP, New York, 1974), p.85.

102. J. D. Joannopoulos, F. Yndurain, L. M. Falicov and M. L. Cohen, "Characterization of amorphous systems using local configurations," in Tetrahedrally Bonded Amorphous Semiconductors, eds. M. H. Brodsky, S. Kirkpatrick, and D. Weaire (AIP, New York, 1974), p.167.

103. P. B. Allen and M. L. Cohen, "Superconductivity and anomalous phonon dispersion in TaC," in Proceedings of the 13th International Conference on Low Temperature Physics, Vol. 3, eds. K. D. Timmerhaus and W. O'Sullivan (Plenum Press, New York, 1974), p.619.

104. J. D. Joannopoulos and M. L. Cohen, "Effects of disorder on the electronic density of states of III-V compounds", Phys. Rev. B 10, 1545 (1974).

105. M. Schluter, J. D. Joannopoulos, M. L. Cohen, L. Ley, S. P. Kowalczyk, R. A. Pollak, and D. A. Shirley, "The structural nature of amorphous Se and Te", Solid State Comm. 15, 1007 (1974).

106. J. R. Chelikowsky and M. L. Cohen, "Electronic Charge Densities and the Temperature Dependence of the Forbidden (222) Reflection in Silicon and Germanium", Phys. Rev. Lett. 33, 1339 (1974).

107. D. J. Chadi and M. L. Cohen, "Correlation between the static dielectric constant and the minimum energy gap", Phys. Lett. 49A, 381 (1974).

108. J. D. Joannopoulos and M. L. Cohen, "New surface states of an unrelaxed (110) surface", Phys. Lett. 49A, 391 (1974).

109. S. G. Louie and M. L. Cohen, "Electronic structure of cesium under pressure", Phys. Rev. B 10, 3237 (1974).

110. J. D. Joannopoulos and M. L. Cohen, "Intrinsic surface states of (110) surfaces of group IV and III-V semiconductors", Phys. Rev. B 10, 5075 (1974).

111. J. R. Chelikowsky and M. L. Cohen, "Electronic structure of silicon", Phys. Rev. B 10, 5095 (1974).

112. C. Varea de Alvarez, M. L. Cohen, S. E. Kohn, Y. Petroff, and Y. R. Shen, "Calculated and measured reflectivity of ZnGeP₂", Phys. Rev. B 10, 5175 (1974).

113. J. D. Joannopoulos, M. Schluter, and M. L. Cohen, "Electronic densities of states of amorphous and trigonal Se and Te," in Proceedings of the 12th International Conference on the Physics of Semiconductors (Fed. Rep. Germany, 1974), p.1304

114. S. G. Louie, J. R. Chelikowsky, and M. L. Cohen, "Local-Field Effects in the Optical Spectrum of Silicon", Phys. Rev. Lett. 34, 155 (1975).

115. G. Martinez, M. Schluter, and M.L. Cohen, "Electronic structure of PbSe and PbTe. I. Band structures, densities of states, and effective masses", Phys. Rev. B 11, 651 (1975).

116. G. Martinez, M. Schluter, and M.L. Cohen, "Electronic structure of PbSe and PbTe II. Optical properties", Phys. Rev. B 11, 660 (1975).

117. D. J. Chadi and M. L. Cohen, "Intrinsic (111) surface states of Ge, GaAs, and ZnSe", Phys. Rev. B 11, 732 (1975).

118. D. J. Chadi and M. L. Cohen, "Tight-binding calculations of (111) surface densities of states of Ge and GaAs", Solid State Comm. 16, 691 (1975).

119. J. D. Joannopoulos, M. Schluter, and M. L. Cohen, "Electronic structure of trigonal and amorphous Se and Te", Phys. Rev. B 11, 2186 (1975).

120. D. J. Chadi and M. L. Cohen, "Tight-binding calculations of the valence bands of diamond and zincblende crystals," Phys. Status Solidi (b) 68, 405 (1975).

121. C. Y. Fong, J. P. Walter, and M. L. Cohen, "Comparison of band structures and charge distributions of copper and silver", Phys. Rev. B 11, 2759 (1975).

122. M. Schluter, G. Martinez, and M. L. Cohen, "Electronic charge densities in PbSe and PbTe", Phys. Rev. B 11, 3808 (1975).

123. C. Y. Fong and D. J. Chadi, and M. L. Cohen, "Alternative form of the nonlocal p potential in the empirical pseudopotential method", Phys. Rev. B 11, 4063 (1975). Erratum: Phys. Rev. B 12, 4584 (1975).

124. M. Schluter, J. R. Chelikowsky, S. G. Louie, and M. L. Cohen, "Self-Consistent Pseudopotential Calculations on Si(111) Unreconstructed and (2 x 1) Reconstructed Surfaces", Phys. Rev. Lett. 34, 1385 (1975).

125. M. Schluter, J. R. Chelikowsky, and M. L. Cohen, "The electronic configuration of Si(111) (2x1) reconstructed surfaces", Phys. Lett. 53A, 217 (1975).

126. G. Martinez, M. Schluter, M. L. Cohen, R. Pinchaux, P. Thiry, D. Dagneaux, and Y. Petroff, "Synchrotron radiation measurements and calculation of core to conduction level transitions in lead chalcogenides", Solid State Comm. 17, 5 (1975).

127. M. Schluter, G. Martinez, and M. L. Cohen, "Pressure and temperature dependence of electronic energy levels in PbSe and PbTe", Phys. Rev. B 12, 650 (1975).

128. S. G. Louie and M. L. Cohen, "Self-Consistent Pseudopotential Calculation for a Metal-Semiconductor Interface", Phys. Rev. Lett. 35, 866 (1975). Erratum: Phys. Rev. Lett. 36, 173 (1976).

129. M. Schluter, J. R. Chelikowsky, and M. L. Cohen, "Electronic Properties of Polymeric Sulfur Nitride", Phys. Rev. Lett. 35, 869 (1975). Erratum: Phys. Rev. Lett. 36, 452 (1976).

130. J. R. Chelikowsky, M. Schluter, S. G. Louie, and M. L.Cohen, "Self-Consistent Pseudopotential Calculation for the (111) Surface of Aluminum", Solid State Comm. 17, 1103 (1975).

131. M. Schluter, J. R. Chelikowsky, S. G. Louie, and M. L. Cohen, "Self-consistent pseudopotential calculations for Si(111) surfaces: Unreconstructed (1x1) and reconstructed (2x1) model structures", Phys. Rev. B 12, 4200 (1975).

132. G. Martinez, M. L. Cohen, and M. Schluter, "Energy-Level Parities at L in PbTe", Phys. Rev. Lett. 35, 1746 (1975).

133. M. L. Cohen, M. Schluter, J. R. Chelikowsky, and S. G. Louie, "Self-consistent pseudopotential method for localized configurations: Molecules", Phys. Rev. B 12, 5575 (1975).

134. J. R. Chelikowsky and M. L. Cohen, "Pseudopotential Valence Charge Densities in Homopolar and Heteropolar Semiconductors", Phys. Rev. Lett. 36, 229 (1976).

135. J. R. Chelikowsky and M. L. Cohen, "(110) surface states in III-V and II-VI zinc-blende semiconductors", Phys. Rev. B 13, 826 (1976).

136. S. G. Louie, M. Schluter, J. R. Chelikowsky, and M. L. Cohen, "Self-consistent electronic states for reconstructed Si vacancy model", Phys. Rev. B 13, 1654 (1976).

137. S. G. Louie and M. L. Cohen, "EElectronic structure of a metal-semiconductor interface", Phys. Rev. B 13, 2461 (1976).

138. J. D. Joannopoulos and M. L. Cohen, "Theory of short-range order and disorder in tetrahedrally bonded semiconductors," in Solid State Physics, Vol. 31, eds. H. Ehrenreich, F. Seitz, and D. Turnbull (Academic Press, New York, 1976), p.71.

139. M. Schluter, J. Camassel, S. Kohn, J. P. Voitchosky, Y. R. Shen, and M. L. Cohen, "Optical properties of GaSe and GaSxSe1-x mixed crystals", Phys. Rev. B 13, 3534 (1976).

140. M. Schluter and M. L. Cohen, "Local density of states for a relaxed Si(111) surface", Phys. Lett. 56A, 419 (1976).

141. J. Camassel, M. Schluter, S. Kohn, J. P. Voitchovsky, Y. R. Shen, and M. L. Cohen, "Wavelength modulation spectra and electronic structure of SnS2 and SnSe2," Phys. Status Solidi (b) 75, 303 (1976).

142. M. Schluter and M. L. Cohen, "Valence-band density of states and chemical bonding for several non-transition-metal layer compounds: SnSe₂, PbI₂, BiI₃, and GaSe", Phys. Rev. B 14, 424 (1976).

143. M. Schluter, K. M. Ho, and M. L. Cohen, "Step-dependent surface states on silicon (111)", Phys. Rev. B 14, 550 (1976).

144. J. R. Chelikowsky and M. L. Cohen, "Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors", Phys. Rev. B 14, 556 (1976). Erratum: Phys. Rev. B 30, 4828 (1984).

145. M. Schluter, K. M. Ho, and M. L. Cohen, "Step-dependent surface states on Si(111)", J. Vac. Sci. Technol. 13, 779 (1976).

146. S. G. Louie, J. R. Chelikowsky, and M. L. Cohen, "Theory of semiconductor surface states and metal-semiconductor interfaces", J. Vac. Sci. Technol. 13, 790 (1976).

147. J. S-Y. Wang, M. Schluter, and M. L. Cohen, "The electronic structure of AgCl," Phys. Status Solidi (b) 77, 295 (1976).

148. S. G. Louie, K. M. Ho, J. R. Chelikowsky, and M. L. Cohen, "Surface states on the (001) surface of Nb", Phys. Rev. Lett. 37, 1289 (1976).

149. J. R. Chelikowsky, S. G. Louie, and M. L. Cohen, "Surface States and Metal Overlayers on the (110) Surface of GaAs", Solid State Comm. 20, 641 (1976).

150. J. R. Chelikowsky, S. G. Louie, and M. L. Cohen, "Relaxation effects on the (110) surface of GaAs", Phys. Rev. B 14, 4724 (1976).

151. P. Thiry, Y. Petroff, R. Pinchaux, J. R. Chelikowsky, and M. L. Cohen, "Electron-hole interaction of the d core levels in III-V semiconductors", Solid State Comm. 20, 1107 (1976).

152. M. Schluter, J. E. Rowe, and G. Margaritondo, K. M. Ho, and M. L. Cohen, "Chemisorption-Site Geometry from Polarized Photoemission: Si(111)Cl and Ge(111)Cl", Phys. Rev. Lett. 37, 1632 (1976).

153. M. L. Cohen and S. G. Louie, "Some comments on the excitonic mechanism of superconductivity," in Superconductivity in d- and f-band Metals, ed. D. H. Douglass (Plenum Press, New York, 1976), p.7.

154. M. Schluter, M. L. Cohen, S. E. Kohn, and C. Y. Fong, "Electronic structure of BiI3," Phys. Status Solidi (b) 78, 737 (1976) .

155. J. Camassel, M. Schluter, S. Kohn, J. P. Voitchovsky, Y. R. Shen, and M. L. Cohen, "Optical properties of layer compounds GaSxSe1-x," in Proceedings of the 13th International Conference on the Physics of Semiconductors, Rome, (1976), p. 384.

156. D. W. Bullett and M. L. Cohen, "Tight-binding theory of chemisorption: CO on Ni(100) and (111)", Solid State Comm. 21, 157 (1977).

157. K. M. Ho, S. G. Louie, J. R. Chelikowsky, and M. L. Cohen, "Self-consistent pseudopotential calculation of the electronic structure of Nb", Phys. Rev. B 15, 1755 (1977).

158. S. G. Louie, J. R. Chelikowsky, and M. L. Cohen, "Ionicity and the theory of Schottky barriers," Phys. Rev. B 15, 2154 (1977).

159. K. M. Ho, M. L. Cohen, and M. Schluter, "A solid-state approach to SCF-X molecular equations", Chem. Phys. Lett. 46, 608 (1977).

160. S. G. Louie and M. L. Cohen, "Superconducting Transition Temperatures for Weak and Strong Electron-Phonon Coupling", Solid State Comm. 22, 1 (1977).

161. K. M. Ho, M. L. Cohen, and M. Schluter, "Hydrogen chemisorption on Si(111)", Phys. Rev. B 15, 3888 (1977).

162. S. G. Louie, K. M. Ho, J. R. Chelikowsky, and M. L. Cohen, "Self-consistent pseudopotential calculations for the ideal (001) surface of Nb", Phys. Rev. B 15, 5627 (1977).

163. D. W. Bullett and M. L. Cohen, "Localized orbital approach to chemisorption I: H on W(100)", J. Phys. C 10, 2083 (1977).

164. D. W. Bullett and M. L. Cohen, "Localized orbital approach to chemisorption II: H and CO on Ni and Pt(001)", J. Phys. C 10, 2101 (1977).

165. W. E. Pickett, S. G. Louie, and M. L. Cohen, "Ge-GaAs (110) Interface: A Self-Consistent Calculation of Interface States and Electronic Structure", Phys. Rev. Lett. 39, 109 (1977). Erratum: Phys. Rev. Lett. 40, 1740 (1978).

166. J. R. Chelikowsky, M. Schluter, and M. L. Cohen, "Semi-empirical pseudopotential calculations for the electronic structure of polymeric sulfur nitride," Phys. Status Solidi (b) 82, 357 (1977).

167. M. L. Cohen and L. M. Falicov, "The 1977 Nobel Prize in Physics", Science 198, 713 (1977).

168. W. E. Pickett and M. L. Cohen, "Theoretical study of relaxation at the (110) Ge-GaAs interface", Solid State Comm. 25, 225 (1978).

169. G. P. Kerker, S. G. Louie, and M. L. Cohen, "Electronic structure of the ideal and reconstructed Si(001) surface", Phys. Rev. B 17, 706 (1978).

170. M. Schluter and M. L. Cohen, "Nature of conduction-band surface resonances for Si(111) surfaces with and without chemisorbed overlayers", Phys. Rev. B 17, 716 (1978).

171. J. Ihm, S. G. Louie, and M. L. Cohen, "Self-consistent pseudopotential calculations for Ge and diamond (111) surfaces", Phys. Rev. B 17, 769 (1978).

172. W. E. Pickett, S. G. Louie, and M. L. Cohen, "Self-consistent calculations of interface states and electronic structure of the (110) interfaces of Ge-GaAs and AlAs-GaAs", Phys. Rev. B 17, 815 (1978). Erratum: Phys. Rev. B 18, 2966 (1978).

173. P. K. Larsen, N. V.Smith, M. Schluter, H. H. Farrell, K. M. Ho, and M. L. Cohen, "Surface energy bands and atomic position of Cl chemisorbed on cleaved Si(111)", Phys. Rev. B 17, 2612 (1978).

174. J. Ihm, S. G. Louie, and M. L. Cohen, "Diamond-Metal Interfaces and the Theory of Schottky Barriers", Phys. Rev. Lett. 40, 1208 (1978).

175. S. G. Louie, and M. L. Cohen, "Dielectric screening and zone-center phonons in Si", Phys. Rev. B 17, 3174 (1978).

176. P. B. Allen, W. E. Pickett, K. M. Ho, and M. L. Cohen, "Anomalous Resistivities of A15 Metals. Insights from Band Theory", Phys. Rev. Lett. 40, 1532 (1978).

177. G. P. Kerker, K. M. Ho, and M. L. Cohen, "Mo(001) Surface: A Self-Consistent Calculation of the Electronic Structure", Phys. Rev. Lett. 40, 1593 (1978).

178. A. Zunger and M. L. Cohen, "Density-Functional Pseudopotential Approach to Crystal Phase Stability and Electronic Structure", Phys. Rev. Lett. 41, 53 (1978).

179. K. M. Ho, W. E. Pickett, and M. L. Cohen, "Metallic Bonding and the Character of Electronic States in Nb₃Ge and Nb₃Al", Phys. Rev. Lett. 41, 580 (1978).

180. W. E. Pickett and M. L. Cohen, "Self-consistent electronic structure of (110) Ge-ZnSe", Phys. Rev. B 18, 939 (1978).

181. K. M. Ho, M. L. Cohen, and W. E. Pickett, "Maximum Superconducting Transition Temperatures in A15 Compounds?", Phys. Rev. Lett. 41, 815 (1978).

182. M. L. Cohen, "Electronic structure of semiconductor interfaces", J. Vac. Sci. Technol. 15, 1266 (1978).

183. J. Ihm, S. G. Louie, and M. L. Cohen, "Pseudopotential calculations of the electronic structure of germanium and diamond Schottky barriers", J. Vac. Sci. Technol. 15, 1377 (1978).

184. W. E. Pickett and M. L. Cohen, "Theoretical trends in the abrupt (110) AlAs-GaAs, Ge-GaAs and Ge-ZnSe interfaces", J. Vac. Sci. Technol. 15, 1437 (1978).

185. J. Ihm, S. G. Louie, and M. L. Cohen, "Electronic structure of Ge and diamond Schottky barriers", Phys. Rev. B 18, 4172 (1978).

186. A. Zunger and M. L. Cohen, "First-principles nonlocal-pseudopotential approach in the density-functional formalism: Development and application to atoms", Phys. Rev. B 18, 5449 (1978).

187. G. P. Kerker, K. M. Ho, and M. L. Cohen, "Self-consistent electronic structure of transition-metal surfaces: The Mo (001) surface", Phys. Rev. B 18, 5473 (1978).

188. J. R. Chelikowsky and M. L. Cohen, "Electronic states on the relaxed (110) surface of GaAs", Solid State Comm. 29, 267 (1979). Erratum: Solid State Comm. 30, 819 (1979).

189. M. Schluter, A. Zunger, G. P. Kerker, K. M. Ho, and M. L. Cohen, "Reliability of Pseudopotential Charge Densities", Phys. Rev. Lett. 42, 540 (1979).

190. A. Zunger and M. L. Cohen, "Self-consistent pseudopotential calculation of the bulk properties of Mo and W", Phys. Rev. B 19, 568 (1979). Erratum: Phys. Rev. B 27, 1376 (1983).

191. J. Ihm and M. L. Cohen, "Self-consistent pseudopotential calculations of the equilibrium properties of bulk and surface Si", Solid State Comm. 29, 711 (1979).

192. M. L. Cohen, "Adsorbates on transition metals," Nature 278, 688 (1979).

193. W. E. Pickett, K. M. Ho, and M. L. Cohen, "Electronic properties of Nb₃Ge and Nb₃Al from self-consistent pseudopotentials. I. Band structure and density of states", Phys. Rev. B 19, 1734 (1979).

194. K. M. Ho, W. E. Pickett, and M. L. Cohen, "Electronic properties of Nb₃Ge and Nb₃Al from self-consistent pseudopotentials. II. Bonding, electronic charge distributions, and structural transformation", Phys. Rev. B 19, 1751 (1979).

195. S. G. Louie, K. M. Ho, and M. L. Cohen, "Self-consistent mixed-basis approach to the electronic structure of solids", Phys. Rev. B 19, 1774 (1979).

196. M. L. Cohen, "The pseudopotential panacea," Physics Today 32, 40 (1979).

197. A. Zunger, G. P. Kerker, and M. L. Cohen, "Calculation of the electronic properties of Mo in a first-principles nonlocal-pseudopotential approach", Phys. Rev. B 20, 581 (1979).

198. J. Ihm and M. L. Cohen, "Self-consistent calculation of the electronic structure of the (110) GaAs-ZnSe interface", Phys. Rev. B 20, 729 (1979).

199. M. L. Cohen, "High-temperature electron-hole superconductivity", Phys. Rev. B 20, 1022 (1979).

200. A. Zunger and M. L. Cohen, "Electronic structure of CuCl", Phys. Rev. B 20, 1189 (1979).