201. J. Ihm, A. Zunger, and M. L. Cohen, "Momentum-space formalism for the total energy of solids", J. Phys. C 12, 4409 (1979). Erratum: J. Phys. C 13, 3095 (1980).

202. G. P. Kerker, A. Zunger, M. L. Cohen, and M. Schluter, "A solid state approach to the electronic structure of molecules: Self-consistent pseudopotential calculation of O2", Solid State Comm. 32, 309 (1979).

203. G. P. Kerker, M. T. Yin, and M. L. Cohen, "Self-consistent electronic structure for a Mo(001) surface with saturated H adsorption", Solid State Comm. 32, 433 (1979).

204. A. Zunger and M. L. Cohen, "First-principles nonlocal-pseudopotential approach in the density-functional formalism. II. Application to electronic and structural properties of solids", Phys. Rev. B 20, 4082 (1979).

205. J. Ihm, P. K. Lam, and M. L. Cohen, "Electronic structure of the [001] InAs-GaSb superlattice", Phys. Rev. B 20, 4120 (1979).

206. J. R. Chelikowsky and M. L. Cohen, "Self-consistent pseudopotential calculation for the relaxed (110) surface of GaAs", Phys. Rev. B 20, 4150 (1979).

207. M. L. Cohen, "Schottky and Bardeen limits for Schottky barriers", J. Vac. Sci. Technol. 16, 1135 (1979).

208. J. R. Chelikowsky and M. L. Cohen, "The (110) surface of GaAs", J. Vac. Sci. Technol. 16, 1307 (1979).

209. J. Ihm, P. K. Lam, and M. L. Cohen, "Electronic structure of the (100) InAs-GaSb superlattice", J. Vac. Sci. Technol. 16, 1512 (1979).

210. G. P. Kerker, M. T. Yin, and M. L. Cohen, "Self-consistent electronic structure of a transition-metal surface with an adsorbate: H on Mo(001)", Phys. Rev. B 20, 4940 (1979).

211. W. E. Pickett, M. L. Cohen, and C. Kittel, "Theory of the hydrogen interstitial impurity in germanium", Phys. Rev. B 20, 5050 (1979). Erratum: Phys. Rev. B 22, 3135 (1980).

212. M. L. Cohen and T. K. Bergstresser, Phys. Rev. 141, 789 (1966), "Science Citation Classic," Current Contents 11, 14 (1980).

213. M. L. Cohen and D. J. Chadi,"Temperature dependence of semiconductor band states," in Handbook on Semiconductors, Vol. 2, ed. M. Balkanski (North-Holland, Amsterdam, 1980), p.155 .

214. J. Ihm and M. L. Cohen, "Calculation of structurally related properties of bulk and surface Si", Phys. Rev. B 21, 1527 (1980). Erratum: Phys. Rev. B 22, 2135 (1980).

215. J. Ihm and M. L. Cohen, "Comment on "Correction to Fuchs' calculation of the electrostatic energy of a Wigner solid"", Phys. Rev. B 21, 3754 (1980).

216. J. Ihm, M. L. Cohen, and V. I. Safarov, "Valence charge distribution and electric field gradients in GaAs-AlAs mixed crystals", Solid State Comm. 34, 325 (1980).

217. M. L. Cohen, "Theoretical overview--emphasis on new mechanisms," in Superconductivity in d- and f-band Metals, eds. H. Suhl and M. B. Maple (Academic Press, New York, 1980), p.13.

218. J. Ihm, M. L. Cohen, and D. J. Chadi, "(2 x 1) reconstructed Si(001) surface: Self-consistent calculations of dimer models", Phys. Rev. B 21, 4592 (1980).

219. M. L. Cohen, "Electrons at interfaces," in Advances in Electronics and Electron Physics, Vol. 51, eds. L. Marton and C. Marton (Academic Press, New York, 1980), p.1.

220. M. L. Cohen, "Comment on "Quantum photoyield of diamond (111) A stable negative-affinity emitter"", Phys. Rev. B 22, 1095 (1980).

221. M. T. Yin and M. L. Cohen, "Microscopic Theory of the Phase Transformation and Lattice Dynamics of Si", Phys. Rev. Lett. 45, 1004 (1980).

222. P. K. Lam, M. L. Cohen, and A. Zunger, "Analytic representation for first-principles pseudopotentials", Phys. Rev. B 22, 1698 (1980).

223. J. E. Northrup, J. Ihm, and M. L. Cohen, "Electronic structure of zinc-blende-wurtzite interfaces: ZnS-ZnS (111-0001) and ZnSe-ZnSe (111-0001)", Phys. Rev. B 22, 2060 (1980).

224. J. Ihm, M. L. Cohen, and J. R. Chelikowsky, "Electronic structure of a Pd monolayer on an Si (111) surface", Phys. Rev. B 22, 4610 (1980).

225. M. L. Cohen, "Pseudopotential theory for surface and bulk properties of semiconductors," in Proceedings of the 15th International Conference on the Physics of Semiconductors, J. Phys. Soc. Jpn. 49, 13 (1980).

226. J. Ihm and M. L. Cohen, "Equilibrium properties and the phase transition of grey and white tin", Phys. Rev. B 23, 1576 (1981).

227. P. K. Lam and M. L. Cohen, "Effective radii and volumes for elements in A15 compounds", Phys. Lett. 81A, 457 (1981).

228. J. Ihm, M. T. Yin, and M. L. Cohen, "Quantum mechanical force calculations in solids: The phonon spectrum of Si", Solid State Comm. 37, 491 (1981).

229. J. E. Northrup and M. L. Cohen, "Electronic structure of the rotation twin stacking fault in beta -ZnS", Phys. Rev. B 23, 2563 (1981).

230. J. Ihm, M. L. Cohen, and S. F. Tuan, "Demons and superconductivity", Phys. Rev. B 23, 3258 (1981).

231. J. R. Chelikowsky, D. J. Chadi, and M. L. Cohen, "Electronic structure of the Al-GaAs(110) surface chemisorption system", Phys. Rev. B 23, 4013 (1981).

232. P. K. Lam and M. L. Cohen, "Electronic charge density and bonding in V₃Si", Phys. Rev. B 23, 6371 (1981).

233. M. L. Cohen, "Pseudopotential calculations for ideal interfaces, in Surfaces and Interfaces in Ceramic and Ceramic-Metal Systems, eds. J. Pask and A. Evans (Plenum Press, New York, 1981), p.1.

234. M. T. Yin and M. L. Cohen, "Microscopic theory of the static structural properties and phase transformation of Ge", Solid State Comm. 38, 625 (1981).

235. M. T. Yin and M. L. Cohen, "Theoretical determination of surface atomic geometry: Si(001)-(2 x 1)", Phys. Rev. B 24, 2303 (1981).

236. M. L. Cohen, "Pseudopotentials and crystal structure, in Structure and Bonding in Crystals, Vol. 1, eds. M. O'Keeffe and A. Navrotsky (Academic Press, New York, 1981), p.25.

237. P. K. Lam and M. L. Cohen, "Ab initio calculation of the static structural properties of Al", Phys. Rev. B 24, 4224 (1981).

238. J. E. Northrup, M. L. Cohen, J. R. Chelikowsky, J. Spence, and A. Olsen, "Electronic structure of the unreconstructed 30 deg partial dislocation in silicon", Phys. Rev. B 24, 4623 (1981).

239. M. T. Yin and M. L. Cohen, "Ground-state properties of diamond", Phys. Rev. B 24, 6121 (1981).

240. J. E. Northrup, J. Ihm, and M. L. Cohen, "Spin Polarization and Atomic Geometry of the Si(111) Surface", Phys. Rev. Lett. 47, 1910 (1981).

241. A. K. McMahan, M. T. Yin, and M. L. Cohen, "Comparison of methods for the calculation of phase stability in silicon", Phys. Rev. B 24, 7210 (1981).

242. M. L. Cohen and J. R. Chelikowsky, "Pseudopotentials for semiconductors," in Handbook on Semiconductors, Vol. 1, ed. W. Paul (North-Holland, Amsterdam, 1982), p.219.

243. M. L. Cohen, V. Heine, and J. C. Phillips, "The quantum mechanics of materials," Scientific American 246, 82 (1982).

244. M. T. Yin and M. L. Cohen, "Ab initio calculation of the phonon dispersion relation: Application to Si", Phys. Rev. B 25, 4317 (1982).

245. P. K. Lam and M. L. Cohen, "Ab initio calculation of phonon frequencies of Al", Phys. Rev. B 25, 6139 (1982).

246. M. Y. Chou, P. K. Lam and M. L. Cohen, "Ab initio calculation of the static structural properties of Be", Solid State Comm. 42, 861 (1982).

247. M. T. Yin and M. L. Cohen, "Theory of ab initio pseudopotential calculations", Phys. Rev. B 25, 7403 (1982).

248. M. T. Yin and M. L. Cohen, "Calculation of the lattice dynamical properties of Ge", Solid State Comm. 43, 391 (1982).

249. S. Froyen and M. L. Cohen, "High pressure phases of III-V semiconductors: A microscopic theory", Solid State Comm. 43, 447 (1982).

250. J. E. Northrup and M. L. Cohen, "Electronic structure of the π-bonded chain model and the nonbuckled antiferromagnetic insulator model for the Si(111) surface", J. Vac. Sci. Technol. 21, 333 (1982).

251. S. G. Louie, S. Froyen, and M. L. Cohen, "Nonlinear ionic pseudopotentials in spin-density-functional calculations", Phys. Rev. B 26, 1738 (1982).

252. M. T. Yin and M. L. Cohen, "Theory of lattice-dynamical properties of solids: Application to Si and Ge", Phys. Rev. B 26, 3259 (1982).

253. J. C. Phillips and M. L. Cohen, "Molecular models of giant photocontractive evaporated chalcogenide films", Phys. Rev. B 26, 3510 (1982).

254. J. E. Northrup and M. L. Cohen, "Reconstruction Mechanism and Surface-State Dispersion for Si(111)-(2 x 1)", Phys. Rev. Lett. 49, 1349 (1982).

255. M. Y. Chou, P. K. Lam, M. L. Cohen, G. Loupias, J. Chomilier, and J. Petiau, "Compton Profile of Beryllium", Phys. Rev. Lett. 49, 1452 (1982).

256. M. L. Cohen and T. H. Geballe, "Novel superconducting materials and mechanisms," in Superconductivity in d- and f-band Metals, eds. W. Buckel and W. Weber (Kernforschungszentrum Karlsruhe GmbH, Karlsruhe, 1982), p.619.

257. M. L. Cohen, "Pseudopotentials and total energy calculations", Physica Scripta T1, 5 (1982).

258. M. T. Yin and M. L. Cohen, "Theory of static structural properties, crystal stability, and phase transformations: Application to Si and Ge", Phys. Rev. B 26, 5668 (1982).

259. S. Froyen and M. L. Cohen, "Static and structural properties of III-V zincblende semiconductors", in Proceedings of the 16th International Conference on the Physics of Semiconductors, Part I (North Holland, Amsterdam, 1983), p.561 [Physica 117B and 118B].

260. J. E. Northrup and M. L. Cohen, "Pseudopotential total energy calculations for Si(111)-(1x1) and Si(111)-(2x1)", in Proceedings of the 16th International Conference on the Physics of Semiconductors, Part II, (North-Holland, Amsterdam, 1983), p.774 [Physica 117A and 118B].

261. M. T. Yin and M. L. Cohen, "Valence-Electron Density in Silicon under High Pressure", Phys. Rev. Lett. 50, 1172 (1983).

262. P. K. Lam and M. L. Cohen, "Calculation of high-pressure phases of A1", Phys. Rev. B 27, 5986 (1983).

263. J. E. Northrup and M. L. Cohen, "Atomic geometry and surface-state spectrum for Ge(111)-(2 x 1)", Phys. Rev. B 27, 6553 (1983).

264. M. T. Yin and M. L. Cohen, "Will Diamond Transform under Megabar Pressures?", Phys. Rev. Lett. 50, 2006 (1983).

265. K. J. Chang, S. Froyen, and M. L. Cohen, "The electronic band structures for zincblende and wurtzite BeO", J. Phys. C 16, 3475 (1983).

266. M. L. Cohen, "Pseudopotentials for calculating the bulk and surface properties of solids," Revista Brasileira de Fisica, Volume Especial, 10 (1983).

267. M. Y. Chou, P. K. Lam, and M. L. Cohen, "Calculation of the Compton profile of beryllium", Phys. Rev. B 28, 1696 (1983).

268. P. K. Lam and M. L. Cohen, "Correlation of superconductivity with material properties", Phys. Lett. 97A, 114 (1983).

269. S. Froyen and M. L. Cohen, "Structural properties of III-V zinc-blende semiconductors under pressure", Phys. Rev. B 28, 3258 (1983).

270. J. E. Northrup, M. T. Yin, and M. L. Cohen, "Pseudopotential local-spin-density calculations for Si₂", Phys. Rev. A 28, 1945 (1983).

271. M. Y. Chou, P. K. Lam, and M. L. Cohen, "Ab initio study of structural and electronic properties of beryllium", Phys. Rev. B 28, 4179 (1983).

272. K. J. Chang, S. Froyen, and M. L. Cohen, "Electronic band structures for zinc-blende and wurtzite CdS", Phys. Rev. B 28, 4736 (1983).

273. J. E. Northrup and M. L. Cohen, "Predictions of the bond length and vibrational frequency of Ge2", Chem. Phys. Lett. 102, 440 (1983).

274. M. L. Cohen, "Fifty years of pseudopotentials," Int. J. Quant. Chem.: Quantum Chemistry Symposium 17, 583 (1983).

275. M. L. Cohen, "Semiconductor," in Funk and Wagnalls New Encyclopedia 23 (Funk and Wagnalls, Inc., New York, 1983), p.295.

276. P. K. Lam and M. L. Cohen, "Dependence of lattice constants and bulk moduli on pseudopotential properties", Phys. Lett. 100A, 293 (1984).

277. J. E. Northrup and M. L. Cohen, "Total energy of the adatom and pyramidal-cluster models for Si(111)", Phys. Rev. B 29, 1966 (1984).

278. S. Froyen and M. L. Cohen, "Structural properties of NaCl", Phys. Rev. B 29, 3770 (1984).

279. K. J. Chang, S. Froyen, and M. L. Cohen, "Pressure coefficients of band gaps in semiconductors", Solid State Comm. 50, 105 (1984).

280. P. K. Lam, M. Y. Chou, and M. L. Cohen, "Temperature- and pressure-induced crystal phase transitions in Be", J. Phys. C 17, 2065 (1984).

281. K. J. Chang and M. L. Cohen, "Theoretical study of BeO: Structural and electronic properties", Solid State Comm. 50, 487 (1984).

282. J. E. Northrup and M. L. Cohen, "Total-energy calculations for the 2 x 1 antiferromagnetic and 1 x 1 paramagnetic states of the Si(111)-(1 x 1) surface", Phys. Rev. B 29, 5944 (1984).

283. W. D. Knight, K. Clemenger, W. A. de Heer, W. A. Saunders, M. Y. Chou, and M. L. Cohen, "Electronic Shell Structure and Abundances of Sodium Clusters", Phys. Rev. Lett. 52, 2141 (1984). Erratum: Phys. Rev. Lett. 53, 510 (1984).

284. M. T. Yin and M. L. Cohen, "Structural theory of graphite and graphitic silicon", Phys. Rev. B 29, 6996 (1984).

285. M. Y. Chou, S. G. Louie, M. L. Cohen, and N. A. W. Holzwarth, "Electron momentum distribution in graphite and lithium-intercalated graphite", Phys. Rev. B 30, 1062 (1984).

286. M. L. Cohen, "Application of the pseudopotential model to solids", Ann. Rev. Mat. Sci. 14, 119 (1984).

287. M. L. Cohen, "The Fermi atomic pseudopotential", Am. J. Phys. 52, 695 (1984).

288. M. L. Cohen, "Electronic structure of solids", Phys. Reports 110, 293 (1984).

289. S. B. Zhang, J. E. Northrup, and M. L. Cohen, "Ge adsorption on the Si(111) surface", Surf. Sci. 145, L465 (1984).

290. D. Vanderbilt, S. G. Louie, and M. L. Cohen, "Calculation of Phonon-Phonon Interactions and the Absence of Two-Phonon Bound States in Diamond", Phys. Rev. Lett. 53, 1477 (1984).

291. K. J. Chang and M. L. Cohen, "High-pressure behavior of MgO: Structural and electronic properties", Phys. Rev. B 30, 4774 (1984).

292. M. L. Cohen and S. G. Louie, "Electronic Properties of Surfaces", Ann. Rev. Phys. Chem. 35, 537 (1984).

293. K. J. Chang and M. L. Cohen, "Structural and electronic properties of the high-pressure hexagonal phases of Si", Phys. Rev. B 30, 5376 (1984).

294. M. Y. Chou, A. Cleland, and M. L. Cohen, "Total energies, abundances, and electronic shell structure of lithium, sodium, and potassium clusters", Solid State Comm. 52, 645 (1984).

295. E. Jensen, R. A. Bartynski, T. Gustafsson, E. W. Plummer, M. Y. Chou, M. L. Cohen, and G. B. Hoflund, "Angle-resolved photoemission study of the electronic structure of beryllium: Bulk band dispersions and many-electron effects", Phys. Rev. B 30, 5500 (1984).

296. M. L. Cohen, "Ab initio calculations for high pressure properties of solids," J. Phys. (Paris) 45, Colloque C8, Supplement 11, 7 (1984).

297. M. Y. Chou, M. L. Cohen, and S. G. Louie, "Compton profile of graphite and lithium-intercalated graphite," in Fall Proceedings of the Materials Research Society, eds. P. C. Eklund, M. S. Dresselhaus, and G. Dresselhaus (MRS, Pittsburg, 1984), p.68.

298. W. Maysenholder, S. G. Louie, and M. L. Cohen, "Cohesive properties of bcc and fcc rubidium from ab initio pseudopotentials", Phys. Rev. B 31, 1817 (1985).

299. S. L. Richardson, M. Y. Chou, and M. L. Cohen, "Ground-state properties of Be₂: A pseudopotential local-density approach", Phys. Rev. A 31, 3444 (1985).

300. M. L. Cohen, "Opening address," in Proceedings of the 17th International Conference on the Physics of Semiconductors, eds. J. D. Chadi and W. A. Harrison (Springer-Verlag, New York, 1985), p.xix.